A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

Metal–organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. with very quality are grown MOCVD, so we used this technique to grow InAlN/GaN and AlN/GaN heterostructures in study. The structural surface properties ultrathin barrier studied by X-ray diffraction (XRD) atomic force microscopy (AFM) measurements. Screw, edge, total dislocation densities samples have been calculated using XRD results. lowest density found be 1.69 × 108 cm−2 Sample B a lattice-matched In0.17Al0.83N barrier. crystal determined (002) symmetric (102) asymmetric diffractions GaN material. In terms roughness, although reference sample has lower value 0.27 nm root mean square values (RMS), A 4-nm AlN layer exhibits highest rough 1.52 RMS. significantly affected thickness. obtained important potential applications like high-electron mobility transistors (HEMTs).